Lotus News: LotusAT @ 2025 ALD For Industry Conference - Presenting on Novel Precursor Separation Method

High Speed Spatial PEALD Using a Novel Precursor Separation Method

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Our recent work at LotusAT has centered on a new, novel way to prevent precursor interaction in Spatial PEALD, based on neutralization of the plasma radicals as they travel from the plasma zone to the precursor zone.  This in turn greatly simplifies the “separation” and allows the technology to be used for relatively tall 3D objects, and to allow greatly increased deposition speed on wafers and other relatively flat substrates.  Here we present recent improvements that allow S-PEALD of SiO2 coatings on 2cm diameter spheres at speeds up to 8 angstroms per second, and on wafers at speeds in excess of 30 angstroms per second, while preserving macro and micro-conformality, respectively.

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We look forward to seeing you there - March 11 & 12, 2025!

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2025 ALD for Industry

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